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New Product Feature GaN/SiC Transistor

New Product Feature:
500W, 1.2-1.4 GHz, GaN/SiC Transistor

Designed for L-band Radar long-pulse applications, this high-power GaN-on-SiC HEMT transistor supplies 500W of peak pulsed output power at 50V drain bias, with 15.5dB gain and 65%efficiency, at 2 milliseconds, 20% pulse conditions.
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